RF Mosfet HEMT 28V 150mA 3GHz 14.5dB 30W 440166
CGH27030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in flanged package
RF MOSFET HEMT 28V 440166
| DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors |
| Product Number | 1465-CGH27030F-ND | CGH27030F | CGH27030F |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 440166 | Ceramic Flanged | 440166 |
| Transistor Technology / Material | GaN | ||
| Power Gain | 14.5 dB |
