MACOM RF FETs, MOSFETs CGH27015F

Description
RF Mosfet HEMT 28V 100mA 3GHz 15dB 15W 440166
Request a Quote Datasheet
Description
RF Mosfet HEMT 28V 100mA 3GHz 15dB 15W 440166
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF FETs, MOSFETs - 1465-CGH27015F-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
1465-CGH27015F-ND
RF FETs, MOSFETs 1465-CGH27015F-ND
RF Mosfet HEMT 28V 100mA 3GHz 15dB 15W 440166

RF Mosfet HEMT 28V 100mA 3GHz 15dB 15W 440166

Buy Now Datasheet
RF Power Transistor - CGH27015F - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
CGH27015F
RF Power Transistor CGH27015F
CGH27015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015F ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9 GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in flanged package

CGH27015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015F ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9 GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in flanged package

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CGH27015F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CGH27015F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CGH27015F
RF MOSFET HEMT 28V 440166

RF MOSFET HEMT 28V 440166

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors RF Transistors
Product Number 1465-CGH27015F-ND CGH27015F CGH27015F
Product Name RF FETs, MOSFETs RF Power Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 440166 Ceramic Flanged 440166
Transistor Technology / Material GaN
Power Gain 15 dB
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