RF Mosfet HEMT 28V 500mA 2.3GHz ~ 2.7GHz 12.5dB 130W 440162
CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX, LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.
RF MOSFET HEMT 28V 440162
| DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors |
| Product Number | 1465-CGH25120F-ND | CGH25120F | CGH25120F |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 440162 | Ceramic Flanged | 440162 |
| Transistor Technology / Material | GaN | ||
| Power Gain | 12.5 dB |
