RF Mosfet HEMT 28V 8GHz 12dB 60W Die
CG2H80060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
RF MOSFET HEMT 28V DIE
| DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors |
| Product Number | 1465-CG2H80060D-GP4-ND | CG2H80060D-GP4 | CG2H80060D-GP4 |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | Die | Die | Die |
| Transistor Technology / Material | GaN | ||
| Power Gain | 15 dB |
