CG2H80030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT), based on 28V, 0.25um GaN-on-SiC process technology. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
RF Mosfet HEMT 28V 200mA 8GHz 16.5dB 30W Die
RF MOSFET HEMT 28V DIE
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | CG2H80030D-GP4 | 1465-CG2H80030D-GP4-ND | CG2H80030D-GP4 |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||
| Package Type | Die | Die | Die |
| Power Gain | 17 dB |
