RF Mosfet HEMT 28V 1A 2.5GHz 20dB 120W 440206
CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40120 ideal for linear and compressed amplifier circuits.
RF MOSFET HEMT 28V 440206
| DigiKey | Richardson RFPD | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors |
| Product Number | 1465-CG2H40120P-ND | CG2H40120P | CG2H40120P |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 440206 | Ceramic Flangeless | 440206 |
| Transistor Technology / Material | GaN | ||
| Power Gain | 20 dB |
