CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40120 ideal for linear and compressed amplifier circuits.
RF Mosfet HEMT 28V 1A 2.5GHz 20dB 130W 440223
RF MOSFET HEMT 28V 440223
| Richardson RFPD | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | CG2H40120F | 1465-CG2H40120F-ND | CG2H40120F |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||
| Package Type | Flanged | 440223 | 440223 |
| Power Gain | 20 dB |
