CG2H40045P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40045P ideal for linear and compressed amplifier circuits. The transistor is available in a pill package.
RF Mosfet HEMT 28V 400mA 4GHz 16dB 45W 440206
RF MOSFET HEMT 28V 440206
| Richardson RFPD | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | CG2H40045P | 1465-CG2H40045P-ND | CG2H40045P |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||
| Package Type | Ceramic Flangeless | 440206 | 440206 |
| Power Gain | 17 dB |
