CG2H40045F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40045F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package.
RF MOSFET HEMT 28V 440193 Product overview: CG2H40045F from MACOM Technology Solutions is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 28V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 28V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-CG2H40045F can be used for catalog matching and distributor lookup.
RF Mosfet HEMT 28V 400mA 4GHz 16dB 440193
RF MOSFET HEMT 28V 440193
| Richardson RFPD | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | CG2H40045F | 285-CG2H40045F | 1465-CG2H40045F-ND | CG2H40045F |
| Product Name | RF Power Transistor | 28V MOSFET Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | |||
| Package Type | Ceramic Flanged | Tray | 440193 | 440193 |
| Power Gain | 17 dB | |||
| Output Power | 45 watts |
