CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40035 ideal for linear and compressed amplifier circuits.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | CG2H40035P |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
