CG2H40025P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025P ideal for linear and compressed amplifier circuits. The transistor is available in a pill package
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | CG2H40025P |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
