CG2H40010P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40010P ideal for linear and compressed amplifier circuits. The transistor is available in flangeless package.
RF Mosfet HEMT 28V 200mA 8GHz 16.7dB 10W 440196
RF MOSFET HEMT 28V 440196
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | CG2H40010P | 1465-CG2H40010P-ND | CG2H40010P |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||
| Package Type | Ceramic Flangeless | 440196 | 440196 |
| Power Gain | 16.7 dB |
