Lite-On Electronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - S2PF580N65AR S2PF580N65AR

Description
Manufacturer: Lite-On Inc. Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1090001-S2PF580N65AR Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Shortage Continuous Drain Current (ID): 8 A Drain to Source Breakdown Voltage: 650 V Drain to Source Resistance: 580 mΩ Gate to Source Voltage (Vgs): 4 V
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Description
Manufacturer: Lite-On Inc. Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1090001-S2PF580N65AR Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Shortage Continuous Drain Current (ID): 8 A Drain to Source Breakdown Voltage: 650 V Drain to Source Resistance: 580 mΩ Gate to Source Voltage (Vgs): 4 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - S2PF580N65AR - 1090001-S2PF580N65AR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - S2PF580N65AR
1090001-S2PF580N65AR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - S2PF580N65AR 1090001-S2PF580N65AR
Manufacturer: Lite-On Inc. Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1090001-S2PF580N65AR Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Shortage Continuous Drain Current (ID): 8 A Drain to Source Breakdown Voltage: 650 V Drain to Source Resistance: 580 mΩ Gate to Source Voltage (Vgs): 4 V

Manufacturer: Lite-On Inc.
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1090001-S2PF580N65AR
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Shortage
Continuous Drain Current (ID): 8 A
Drain to Source Breakdown Voltage: 650 V
Drain to Source Resistance: 580 mΩ
Gate to Source Voltage (Vgs): 4 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1090001-S2PF580N65AR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - S2PF580N65AR
V(BR)DSS 650 volts
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