The LTR-209 is an NPN silicon phototransistor in a clear plastic lensed package, designed for light detection in electronic circuits. It has an acceptance half-angle of 8 degrees and is mechanically and spectrally matched to the LTE-209 infrared emitting diode series. The package dimensions are not explicitly listed, but lead spacing is measured where leads emerge from the body. It supports collector currents up to 4 mA under 1 mW/cm² irradiance at 940 nm, with a collector-emitter breakdown voltage of 30 V and emitter-collector breakdown voltage of 5 V. The device has a collector-emitter saturation voltage of 0.4 V, rise time of 10 µs, fall time of 15 µs, and a dark current of 100 nA at 5 V. It operates from -40°C to +85°C and can be soldered at 260°C for 5 seconds. Power dissipation is rated at 100 mW.
Photo Transistor Product overview: LTR-209 from Lite-On is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Phototransistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 544-LTR-209 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 544-LTR-209 |
| Product Name | Bipolar Transistor |
| PD | 0.1000 milliwatts |
