The 4N35M is a dual-in-line phototransistor photocoupler with a wide lead spacing package, offering 3,550 Vrms isolation voltage and a current transfer ratio of at least 100% at 10 mA forward current and 10 V collector-emitter voltage. It features a response time of 3 μs typ. with a 100 Ω load and operates from -55 °C to +100 °C. The device meets safety standards including UL, CSA, FIMKO, VDE, BSI, and CQC, with creepage and clearance distances exceeding 7.0 mm. It is RoHS compliant, passes HBM ESD testing at 8000 V, and has a maximum soldering temperature of 260 °C for 10 seconds.
Transistor Output Optocoupler, 1-Element, 3550V Isolation, ROHS COMPLIANT, DIP-6 Product overview: 4N35M from Lite-On is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3550V, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 3550V, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N35M can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N35M |
| Product Name | 3550V DIP Bipolar Transistor |
| PD | 0.3500 milliwatts |
