Linear Systems Bipolar Transistor Arrays LS352 TO-78 6L

Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 10mA 200MHz 500mW Through Hole TO-78-6
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Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 10mA 200MHz 500mW Through Hole TO-78-6
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Datasheet
Datasheet Summary
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Monolithic dual PNP transistor array in TO-78-6 package for general-purpose applications, with a collector-to-emitter voltage rating of 60V, collector current of 10mA, and maximum power dissipation of 500mW. Features a typical current gain hFE of 200 at 1mA, typical base-emitter voltage matching of 0.2mV, and a current gain-bandwidth product of 200MHz. Operating junction temperature ranges up to +150°C with storage temperature from -55°C to +150°C.

Datasheet Summary
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Monolithic dual PNP transistor array in TO-78-6 package for general-purpose applications, with a collector-to-emitter voltage rating of 60V, collector current of 10mA, and maximum power dissipation of 500mW. Features a typical current gain hFE of 200 at 1mA, typical base-emitter voltage matching of 0.2mV, and a current gain-bandwidth product of 200MHz. Operating junction temperature ranges up to +150°C with storage temperature from -55°C to +150°C.

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Bipolar Transistor Arrays - 4004-LS352TO-786L-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
4004-LS352TO-786L-ND
Bipolar Transistor Arrays 4004-LS352TO-786L-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 10mA 200MHz 500mW Through Hole TO-78-6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 10mA 200MHz 500mW Through Hole TO-78-6

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 4004-LS352TO-786L-ND
Product Name Bipolar Transistor Arrays
Polarity PNP
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