Linear Systems Bipolar Transistor Arrays LS350 SOIC 8L

Monolithic dual PNP transistor array for general-purpose applications, housed in a 6-lead SOT-23 package. Features include a collector-to-base voltage rating of 25 V, collector current of 10 mA, current gain (hFE) of 200 min at 10 µA and 1 mA, a typical current gain bandwidth product (fT) of 275 MHz at 1 mA, and a maximum power dissipation of 500 mW. Base-emitter voltage matching is tight, with a typical differential of 0.2 mV at 10 µA. Operating junction temperature ranges from -55°C to +150°C. Complies with standard operational limits for bipolar transistor arrays.