Linear Systems Bipolar Transistor Arrays IT131 PDIP 8L ROHS

Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 10mA 90MHz 500mW Through Hole 8-DIP
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Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 10mA 90MHz 500mW Through Hole 8-DIP
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Datasheet
Datasheet Summary
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Monolithic dual PNP transistor array in 8-pin DIP package, rated for collector current up to -10 mA and maximum power dissipation of 500 mW when mounted on both sides. Collector-to-emitter and collector-to-base breakdown voltages are -45 V minimum, with a current gain (hFE) minimum of 80 at IC = -1.0 mA and VCE = -5 V. Current gain bandwidth product is 90 MHz minimum, and collector-to-collector leakage is ±500 nA maximum at ±60 V. The device is compliant with RoHS and operates within a junction temperature range of -55°C to +150°C.

Datasheet Summary
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Monolithic dual PNP transistor array in 8-pin DIP package, rated for collector current up to -10 mA and maximum power dissipation of 500 mW when mounted on both sides. Collector-to-emitter and collector-to-base breakdown voltages are -45 V minimum, with a current gain (hFE) minimum of 80 at IC = -1.0 mA and VCE = -5 V. Current gain bandwidth product is 90 MHz minimum, and collector-to-collector leakage is ±500 nA maximum at ±60 V. The device is compliant with RoHS and operates within a junction temperature range of -55°C to +150°C.

Suppliers

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Bipolar Transistor Arrays - 4004-IT131PDIP8LROHS-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
4004-IT131PDIP8LROHS-ND
Bipolar Transistor Arrays 4004-IT131PDIP8LROHS-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 10mA 90MHz 500mW Through Hole 8-DIP

Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 10mA 90MHz 500mW Through Hole 8-DIP

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 4004-IT131PDIP8LROHS-ND
Product Name Bipolar Transistor Arrays
Polarity PNP
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