AVX Corporation Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors CAN0001DP

Description
Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors Packaging: Bulk Part Status: Obsolete Maximum AC Volts: 6.4 V Maximum DC Volts: 9 V Varistor Voltage (Typ): 70 V Current - Surge: 1.2 kA Energy: 21J Number of Circuits: 10
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Description
Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors Packaging: Bulk Part Status: Obsolete Maximum AC Volts: 6.4 V Maximum DC Volts: 9 V Varistor Voltage (Typ): 70 V Current - Surge: 1.2 kA Energy: 21J Number of Circuits: 10
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Datasheet
Datasheet Summary
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The CAN0001DP is a zinc oxide (ZnO) based varistor designed for protection of CAN and FlexRay communication buses, featuring a 0603 discrete package measuring 1.60 mm × 0.80 mm with a maximum thickness of 0.90 mm. It operates at a maximum DC working voltage of 18 V, clamps transients at 27.5 V with a peak current rating of 2 A (8x20 μs), and offers a maximum capacitance of 22 pF at 1 MHz. The device supports up to 25 kV ESD contact discharge, has an energy rating of 4 J (10x1000 μs), and complies with AEC-Q200. Its compact size and low capacitance make it suitable for high-speed data lines with minimal signal distortion.

Datasheet Summary
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The CAN0001DP is a zinc oxide (ZnO) based varistor designed for protection of CAN and FlexRay communication buses, featuring a 0603 discrete package measuring 1.60 mm × 0.80 mm with a maximum thickness of 0.90 mm. It operates at a maximum DC working voltage of 18 V, clamps transients at 27.5 V with a peak current rating of 2 A (8x20 μs), and offers a maximum capacitance of 22 pF at 1 MHz. The device supports up to 25 kV ESD contact discharge, has an energy rating of 4 J (10x1000 μs), and complies with AEC-Q200. Its compact size and low capacitance make it suitable for high-speed data lines with minimal signal distortion.

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors Packaging: Bulk Part Status: Obsolete Maximum AC Volts: 6.4 V Maximum DC Volts: 9 V Varistor Voltage (Typ): 70 V Current - Surge: 1.2 kA Energy: 21J Number of Circuits: 10

Manufacturer: AMIS
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Packaging: Bulk
Part Status: Obsolete
Maximum AC Volts: 6.4 V
Maximum DC Volts: 9 V
Varistor Voltage (Typ): 70 V
Current - Surge: 1.2 kA
Energy: 21J
Number of Circuits: 10

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Package Type SOT3
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