Kioxia America, Inc Memory THGJFGT1E45BAIL

Description
FLASH - NOR (SLC) Memory IC 2Tbit UFS 3.1 1.16 GHz 153-BGA (11.5x13)
  • Memory - THGJFGT1E45BAIL - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
FLASH - NOR (SLC) Memory IC 2Tbit UFS 3.1 1.16 GHz 153-BGA (11.5x13)

Suppliers

Company
Product
Description
Supplier Links
Memory - THGJFGT1E45BAIL - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
THGJFGT1E45BAIL
Memory THGJFGT1E45BAIL
FLASH - NOR (SLC) Memory IC 2Tbit UFS 3.1 1.16 GHz 153-BGA (11.5x13)

FLASH - NOR (SLC) Memory IC 2Tbit UFS 3.1 1.16 GHz 153-BGA (11.5x13)

Buy Now

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number THGJFGT1E45BAIL
Product Name Memory
Memory Category Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882660 - RS Components, Ltd.
RS Components, Ltd.
SDRAM
1882660
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - NMC27C64Q-15 - 258517-NMC27C64Q-15 - Win Source Electronics
Texas Instruments
Memory - NMC27C64Q-15
NMC27C64Q-15
View Details
2 suppliers
Memory - SMJ44C256 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ44C256
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - PC28F320C3BD70A - Lingto Electronic Limited
Rochester Electronics
Memory
PC28F320C3BD70A
Specs
Memory Category Flash; Flash
Access Time 70 ns
Density 32000 kbits
View Details