The LSIC1MO120E0080 is a 1200 V, 80 mΩ N-channel silicon carbide MOSFET designed for high-frequency, high-efficiency power conversion applications such as solar inverters, UPS, motor drives, and DC/DC converters. It comes in a TO-247-3L package with dimensions of 20.800 to 21.463 mm in length, 15.494 to 16.256 mm in width, and a recommended PCB hole pattern of 5.440 mm BSC pitch. The device has a continuous drain current of 25 A at 100 °C case temperature, a maximum junction temperature of 175 °C, and a maximum thermal resistance from junction to case of 0.7 °C/W. It features low gate charge (92 nC typ), low output capacitance (82 pF typ), and operates as a normally-off device across all temperatures. The gate-source voltage is rated from -6 V to +22 V absolute maximum, with recommended operation between -5 V and +20 V. The part meets AEC-Q200 and RoHS standards.
SiC MOSFETs 1200V 80mOhm SiC MOSFET Product overview: LSIC1MO120E0080 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 80mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 80mOhm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-LSIC1MO120E0080
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-LSIC1MO120E0080 |
| Product Name | 1200V 80mOhm MOSFET Transistor |
| Polarity | N-Channel |
