Manufacturer: IXYS
Win Source Part Number: 1049983-IXTY64N055T
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 64A (Tc)
Gate-Source Threshold Voltage: 4V @ 25μA
Max Gate Charge: 37nC @ 10V
Max Input Capacitance: 1420pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
N-Channel 55V 64A (Tc) 130W (Tc) Surface Mount TO-252AA
MOSFET N-CH 55V 64A TO252
MOSFET N-CH 55V 64A TO252
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049983-IXTY64N055T | IXTY64N055T-ND | IXTY64N055T | IXTY64N055T |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY64N055T | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |
| V(BR)DSS | 55 volts | 55 volts | ||
| PD | 130000 milliwatts | 130000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
