Zilog Single FETs, MOSFETs IXTY55N075T

Description
N-Channel 75V 55A (Tc) 130W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet
Description
N-Channel 75V 55A (Tc) 130W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

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Single FETs, MOSFETs - IXTY55N075T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTY55N075T-ND
Single FETs, MOSFETs IXTY55N075T-ND
N-Channel 75V 55A (Tc) 130W (Tc) Surface Mount TO-252AA

N-Channel 75V 55A (Tc) 130W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY55N075T - 1049982-IXTY55N075T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY55N075T
1049982-IXTY55N075T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY55N075T 1049982-IXTY55N075T
Manufacturer: IXYS Win Source Part Number: 1049982-IXTY55N075T Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 130W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 55A (Tc) Gate-Source Threshold Voltage: 4V @ 25μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 19.5 mOhm @ 27.5A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049982-IXTY55N075T
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 55A (Tc)
Gate-Source Threshold Voltage: 4V @ 25μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 19.5 mOhm @ 27.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTY55N075T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTY55N075T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTY55N075T
MOSFET N-CH 75V 55A TO252

MOSFET N-CH 75V 55A TO252

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTY55N075T-ND 1049982-IXTY55N075T IXTY55N075T
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY55N075T Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 75 volts
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