Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY4N60P IXTY4N60P

Description
Manufacturer: IXYS Win Source Part Number: 1049981-IXTY4N60P Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5.5V @ 100μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 635pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Quantity per package: 70
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY4N60P - 1049981-IXTY4N60P - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTY4N60P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: IXYS Win Source Part Number: 1049981-IXTY4N60P Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5.5V @ 100μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 635pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Quantity per package: 70
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY4N60P - 1049981-IXTY4N60P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY4N60P
1049981-IXTY4N60P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY4N60P 1049981-IXTY4N60P
Manufacturer: IXYS Win Source Part Number: 1049981-IXTY4N60P Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5.5V @ 100μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 635pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Quantity per package: 70

Manufacturer: IXYS
Win Source Part Number: 1049981-IXTY4N60P
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 100μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 635pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 70

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTY4N60P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTY4N60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTY4N60P
MOSFET N-CH 600V 4A TO252

MOSFET N-CH 600V 4A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049981-IXTY4N60P IXTY4N60P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY4N60P Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 89000 milliwatts
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