Zilog Single FETs, MOSFETs IXTY44N10T

Description
N-Channel 100V 44A (Tc) 130W (Tc) Surface Mount TO-252AA
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Description
N-Channel 100V 44A (Tc) 130W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

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Single FETs, MOSFETs - 238-IXTY44N10T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTY44N10T-ND
Single FETs, MOSFETs 238-IXTY44N10T-ND
N-Channel 100V 44A (Tc) 130W (Tc) Surface Mount TO-252AA

N-Channel 100V 44A (Tc) 130W (Tc) Surface Mount TO-252AA

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY44N10T - 1049979-IXTY44N10T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY44N10T
1049979-IXTY44N10T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY44N10T 1049979-IXTY44N10T
Manufacturer: IXYS Win Source Part Number: 1049979-IXTY44N10T Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 130W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 44A (Tc) Gate-Source Threshold Voltage: 4.5V @ 25μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1262pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 30 mOhm @ 22A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049979-IXTY44N10T
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 44A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 25μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 1262pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 30 mOhm @ 22A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
MOSFET 44 Amps 100V 25.0 Rds

MOSFET 44 Amps 100V 25.0 Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTY44N10T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTY44N10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTY44N10T
MOSFET N-CH 100V 44A TO252

MOSFET N-CH 100V 44A TO252

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 238-IXTY44N10T-ND 1049979-IXTY44N10T IXTY44N10T IXTY44N10T
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY44N10T MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252, (D-Pak) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 100 volts
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