Zilog Single FETs, MOSFETs IXTY3N60P

Description
N-Channel 600V 3A (Tc) 70W (Tc) Surface Mount TO-252AA
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Description
N-Channel 600V 3A (Tc) 70W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

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Single FETs, MOSFETs - IXTY3N60P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTY3N60P-ND
Single FETs, MOSFETs IXTY3N60P-ND
N-Channel 600V 3A (Tc) 70W (Tc) Surface Mount TO-252AA

N-Channel 600V 3A (Tc) 70W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY3N60P - 1049978-IXTY3N60P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY3N60P
1049978-IXTY3N60P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY3N60P 1049978-IXTY3N60P
Manufacturer: IXYS Win Source Part Number: 1049978-IXTY3N60P Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5.5V @ 50μA Max Gate Charge: 9.8nC @ 10V Max Input Capacitance: 411pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.9 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance Quantity per package: 70

Manufacturer: IXYS
Win Source Part Number: 1049978-IXTY3N60P
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 50μA
Max Gate Charge: 9.8nC @ 10V
Max Input Capacitance: 411pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.9 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Quantity per package: 70

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTY3N60P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTY3N60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTY3N60P
MOSFET N-CH 600V 3A TO252

MOSFET N-CH 600V 3A TO252

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTY3N60P-ND 1049978-IXTY3N60P IXTY3N60P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY3N60P Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252, (D-Pak) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 600 volts
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