Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs IXTY2R4N50P

Description
Win Source Part Number: 1346726-IXTY2R4N50P Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: PolarHV™ Package: Tube Standard Package: 70 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Power Dissipation (Max): 55W (Tc) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63 Supplier Device Package: TO-252AA Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTY2 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3.75Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 5.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Request a Quote Datasheet
Description
Win Source Part Number: 1346726-IXTY2R4N50P Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: PolarHV™ Package: Tube Standard Package: 70 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Power Dissipation (Max): 55W (Tc) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63 Supplier Device Package: TO-252AA Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTY2 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3.75Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 5.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346726-IXTY2R4N50P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1346726-IXTY2R4N50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1346726-IXTY2R4N50P
Win Source Part Number: 1346726-IXTY2R4N50P Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: PolarHV™ Package: Tube Standard Package: 70 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Power Dissipation (Max): 55W (Tc) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63 Supplier Device Package: TO-252AA Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTY2 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3.75Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 5.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V

Win Source Part Number: 1346726-IXTY2R4N50P
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: PolarHV™
Package: Tube
Standard Package: 70
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Power Dissipation (Max): 55W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63
Supplier Device Package: TO-252AA
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTY2
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.75Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V

Buy Now Datasheet
Single FETs, MOSFETs - IXTY2R4N50P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTY2R4N50P-ND
Single FETs, MOSFETs IXTY2R4N50P-ND
N-Channel 500V 2.4A (Tc) 55W (Tc) Surface Mount TO-252AA

N-Channel 500V 2.4A (Tc) 55W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTY2R4N50P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTY2R4N50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTY2R4N50P
MOSFET N-CH 500V 2.4A TO252

MOSFET N-CH 500V 2.4A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1346726-IXTY2R4N50P IXTY2R4N50P-ND IXTY2R4N50P
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data