MOSFET N-CH 500V 1.6A TO252
Manufacturer: IXYS
Win Source Part Number: 1049974-IXTY1R6N50D2
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 1.6A (Tc)
Max Gate Charge: 23.7nC @ 5V
Max Input Capacitance: 645pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.3 Ohm @ 800mA, 0V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
N-Channel 500V 1.6A (Tc) 100W (Tc) Surface Mount TO-252AA
MOSFET N-CH 500V 1.6A TO252
MOSFET N-CH MOSFETS (D2) 500V 1.6A
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTY1R6N50D2 | 1049974-IXTY1R6N50D2 | 238-IXTY1R6N50D2-ND | IXTY1R6N50D2 | IXTY1R6N50D2 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY1R6N50D2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 500 volts | 500 volts | |||
| IDSS | 1600 milliamps | ||||
| PD | 100000 milliwatts | 100000 milliwatts |
