MOSFET N-CH 1000V 1.6A TO252
Manufacturer: IXYS
Win Source Part Number: 1191305-IXTY1R6N100D
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Technology: MOSFET
FET Feature: Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Family Name: IXTY1R6N100D2
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-252, (D-Pak)
Channel Type Type: N
Drain Source Voltage: 1000V
Gate Charge (Qg) (Maximum) @ Vgs: 27nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 645pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 100W (Tc)
Rds On (Maximum) @ Id, Vgs: 10 Ohm @ 800mA, 0V
Alternative Parts (Cross-Reference): STD2NK90Z; AOD2N100; STD2N95K5;
Introduction Date: March 28, 2011
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2025
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Quantity per package: 70
N-Channel 1000V 1.6A (Tc) 100W (Tc) Surface Mount TO-252AA
MOSFET N-CH MOSFETS (D2) 1000V 1.6A
MOSFET N-CH 1000V 1.6A TO252
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXTY1R6N100D2 | 1191305-IXTY1R6N100D2 | 238-IXTY1R6N100D2-ND | IXTY1R6N100D2 | IXTY1R6N100D2 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY1R6N100D2 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 1000 volts | ||||
| IDSS | 1600 milliamps | ||||
| PD | 100000 milliwatts | 100000 milliwatts |
