Zilog Single FETs, MOSFETs IXTY1R6N100D2

Description
MOSFET N-CH 1000V 1.6A TO252
Request a Quote Datasheet
Description
MOSFET N-CH 1000V 1.6A TO252
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXTY1R6N100D2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTY1R6N100D2
Single FETs, MOSFETs IXTY1R6N100D2
MOSFET N-CH 1000V 1.6A TO252

MOSFET N-CH 1000V 1.6A TO252

Supplier's Site Datasheet
Single FETs, MOSFETs - 238-IXTY1R6N100D2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTY1R6N100D2-ND
Single FETs, MOSFETs 238-IXTY1R6N100D2-ND
N-Channel 1000V 1.6A (Tc) 100W (Tc) Surface Mount TO-252AA

N-Channel 1000V 1.6A (Tc) 100W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY1R6N100D2 - 1191305-IXTY1R6N100D2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY1R6N100D2
1191305-IXTY1R6N100D2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY1R6N100D2 1191305-IXTY1R6N100D2
Manufacturer: IXYS Win Source Part Number: 1191305-IXTY1R6N100D 2 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting: SMD Technology: MOSFET FET Feature: Depletion Mode Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Family Name: IXTY1R6N100D2 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-252, (D-Pak) Channel Type Type: N Drain Source Voltage: 1000V Gate Charge (Qg) (Maximum) @ Vgs: 27nC @ 5V Input Capacitance (Ciss) (Maximum) @ Vds: 645pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 100W (Tc) Rds On (Maximum) @ Id, Vgs: 10 Ohm @ 800mA, 0V Alternative Parts (Cross-Reference): STD2NK90Z; AOD2N100; STD2N95K5; Introduction Date: March 28, 2011 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 70

Manufacturer: IXYS
Win Source Part Number: 1191305-IXTY1R6N100D2
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Technology: MOSFET
FET Feature: Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Family Name: IXTY1R6N100D2
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-252, (D-Pak)
Channel Type Type: N
Drain Source Voltage: 1000V
Gate Charge (Qg) (Maximum) @ Vgs: 27nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 645pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 100W (Tc)
Rds On (Maximum) @ Id, Vgs: 10 Ohm @ 800mA, 0V
Alternative Parts (Cross-Reference): STD2NK90Z; AOD2N100; STD2N95K5;
Introduction Date: March 28, 2011
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2025
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Quantity per package: 70

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTY1R6N100D2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTY1R6N100D2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTY1R6N100D2
MOSFET N-CH 1000V 1.6A TO252

MOSFET N-CH 1000V 1.6A TO252

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH MOSFETS (D2) 1000V 1.6A

MOSFET N-CH MOSFETS (D2) 1000V 1.6A

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTY1R6N100D2 238-IXTY1R6N100D2-ND 1191305-IXTY1R6N100D2 IXTY1R6N100D2 IXTY1R6N100D2
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY1R6N100D2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 1000 volts
IDSS 1600 milliamps
PD 100000 milliwatts 100000 milliwatts
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