Zilog Single FETs, MOSFETs IXTY1R4N60P

Description
N-Channel 600V 1.4A (Tc) 50W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet
Description
N-Channel 600V 1.4A (Tc) 50W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - IXTY1R4N60P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTY1R4N60P-ND
Single FETs, MOSFETs IXTY1R4N60P-ND
N-Channel 600V 1.4A (Tc) 50W (Tc) Surface Mount TO-252AA

N-Channel 600V 1.4A (Tc) 50W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1382391-IXTY1R4N60P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1382391-IXTY1R4N60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1382391-IXTY1R4N60P
Win Source Part Number: 1382391-IXTY1R4N60P Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Series: PolarHV™ Package: Tube Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 700mA, 10V Vgs(th) (Max) @ Id: 5.5V @ 25µA Power Dissipation (Max): 50W (Tc) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTY1 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Moisture Sensitivity Level (MSL): 1 (Unlimited) Standard Package: 70 pcs

Win Source Part Number: 1382391-IXTY1R4N60P
Category: Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Series: PolarHV™
Package: Tube
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id: 5.5V @ 25µA
Power Dissipation (Max): 50W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTY1
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Standard Package: 70 pcs

Buy Now Datasheet
Singapore
600V 1.4A TO252 MOSFET Transistor
278-IXTY1R4N60P
600V 1.4A TO252 MOSFET Transistor 278-IXTY1R4N60P
MOSFET N-CH 600V 1.4A TO252 Product overview: IXTY1R4N60P from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 1.4A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 1.4A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTY1R4N60P can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 1.4A TO252 Product overview: IXTY1R4N60P from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 1.4A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 1.4A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTY1R4N60P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTY1R4N60P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTY1R4N60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTY1R4N60P
MOSFET N-CH 600V 1.4A TO252

MOSFET N-CH 600V 1.4A TO252

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTY1R4N60P-ND 1382391-IXTY1R4N60P 278-IXTY1R4N60P IXTY1R4N60P
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 600V 1.4A TO252 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK) Tube TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
PD 50000 milliwatts 50000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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