Manufacturer: IXYS
Win Source Part Number: 1049971-IXTY18P10T
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 2100pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 120 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient
Quantity per package: 70
P-Channel 100V 18A (Tc) 83W (Tc) Surface Mount TO-252AA
MOSFET P-CH 100V 18A TO252
MOSFET P-CH 100V 18A TO252
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049971-IXTY18P10T | 238-IXTY18P10T-ND | IXTY18P10T | IXTY18P10T | IXTY18P10T |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY18P10T | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | ||
| V(BR)DSS | 100 volts | 100 volts | |||
| PD | 83000 milliwatts | 83000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
