Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs IXTY14N60X2

Description
Win Source Part Number: 1346862-IXTY14N60X2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Ultra X2 Package: Tube Standard Package: 70 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Power Dissipation (Max): 180W (Tc) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63 Supplier Device Package: TO-252AA Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTY14 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
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Description
Win Source Part Number: 1346862-IXTY14N60X2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Ultra X2 Package: Tube Standard Package: 70 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Power Dissipation (Max): 180W (Tc) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63 Supplier Device Package: TO-252AA Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTY14 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
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Description
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346862-IXTY14N60X2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1346862-IXTY14N60X2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1346862-IXTY14N60X2
Win Source Part Number: 1346862-IXTY14N60X2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Ultra X2 Package: Tube Standard Package: 70 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Power Dissipation (Max): 180W (Tc) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63 Supplier Device Package: TO-252AA Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTY14 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V

Win Source Part Number: 1346862-IXTY14N60X2
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Ultra X2
Package: Tube
Standard Package: 70
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Power Dissipation (Max): 180W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63
Supplier Device Package: TO-252AA
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTY14
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTY14N60X2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTY14N60X2-ND
Single FETs, MOSFETs 238-IXTY14N60X2-ND
N-Channel 600V 14A (Tc) 180W (Tc) Surface Mount TO-252AA

N-Channel 600V 14A (Tc) 180W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTY14N60X2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTY14N60X2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTY14N60X2
MOSFET N-CH 600V 14A TO252

MOSFET N-CH 600V 14A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1346862-IXTY14N60X2 238-IXTY14N60X2-ND IXTY14N60X2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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