Zilog FETs - Single - IXTY02N120P IXTY02N120P

Description
Manufacturer: IXYS Win Source Part Number: 1191304-IXTY02N120P Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Family Name: IXTY02N120P Categories: Discrete Semiconductor Products Supplier Device Package: TO-252, (D-Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 33W Introduction Date: October 08, 2009 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 70 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1200V Id - Continuous Drain Current: 200mA Rds On (Maximum) at Id, Vgs: 75Ohm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 4.7nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 104pF at 25V
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Description
Manufacturer: IXYS Win Source Part Number: 1191304-IXTY02N120P Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Family Name: IXTY02N120P Categories: Discrete Semiconductor Products Supplier Device Package: TO-252, (D-Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 33W Introduction Date: October 08, 2009 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 70 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1200V Id - Continuous Drain Current: 200mA Rds On (Maximum) at Id, Vgs: 75Ohm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 4.7nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 104pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IXTY02N120P - 1191304-IXTY02N120P - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXTY02N120P
1191304-IXTY02N120P
FETs - Single - IXTY02N120P 1191304-IXTY02N120P
Manufacturer: IXYS Win Source Part Number: 1191304-IXTY02N120P Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Family Name: IXTY02N120P Categories: Discrete Semiconductor Products Supplier Device Package: TO-252, (D-Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 33W Introduction Date: October 08, 2009 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 70 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1200V Id - Continuous Drain Current: 200mA Rds On (Maximum) at Id, Vgs: 75Ohm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 4.7nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 104pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191304-IXTY02N120P
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: IXTY02N120P
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 33W
Introduction Date: October 08, 2009
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2024
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 70
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1200V
Id - Continuous Drain Current: 200mA
Rds On (Maximum) at Id, Vgs: 75Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 4.7nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 104pF at 25V

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Thief River Falls, MN, United States
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IXTY02N120P-ND
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N-Channel 1200V 200mA (Tc) 33W (Tc) Surface Mount TO-252AA

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTY02N120P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTY02N120P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTY02N120P
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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1191304-IXTY02N120P IXTY02N120P-ND IXTY02N120P IXTY02N120P
Product Name FETs - Single - IXTY02N120P Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 1200 volts
PD 33000 milliwatts
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