Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY01N100D IXTY01N100D

Description
Manufacturer: IXYS Win Source Part Number: 205719-IXTY01N100D Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Family Name: IXTY01N100D Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 1000V (1kV) Continuous Drain Current at 25°C: 100mA (Tc) Max Input Capacitance: 120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 Ohm @ 50mA, 0V Alternative Parts (Cross-Reference): IXTY01N100D-TRL; Introduction Date: June 16, 2017 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2033 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 205719-IXTY01N100D Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Family Name: IXTY01N100D Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 1000V (1kV) Continuous Drain Current at 25°C: 100mA (Tc) Max Input Capacitance: 120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 Ohm @ 50mA, 0V Alternative Parts (Cross-Reference): IXTY01N100D-TRL; Introduction Date: June 16, 2017 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2033 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY01N100D - 205719-IXTY01N100D - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY01N100D
205719-IXTY01N100D
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY01N100D 205719-IXTY01N100D
Manufacturer: IXYS Win Source Part Number: 205719-IXTY01N100D Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Family Name: IXTY01N100D Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 1000V (1kV) Continuous Drain Current at 25°C: 100mA (Tc) Max Input Capacitance: 120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 Ohm @ 50mA, 0V Alternative Parts (Cross-Reference): IXTY01N100D-TRL; Introduction Date: June 16, 2017 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2033 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 205719-IXTY01N100D
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Family Name: IXTY01N100D
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 100mA (Tc)
Max Input Capacitance: 120pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 Ohm @ 50mA, 0V
Alternative Parts (Cross-Reference): IXTY01N100D-TRL;
Introduction Date: June 16, 2017
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2033
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTY01N100D-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTY01N100D-ND
Single FETs, MOSFETs 238-IXTY01N100D-ND
N-Channel 1000V 100mA (Tc) 1.1W (Ta), 25W (Tc) Surface Mount TO-252AA

N-Channel 1000V 100mA (Tc) 1.1W (Ta), 25W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTY01N100D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTY01N100D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTY01N100D
MOSFET N-CH 1000V 400MA TO252AA

MOSFET N-CH 1000V 400MA TO252AA

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET N-CH DEPLETN 1000V 100MA TO-25

MOSFET MOSFET N-CH DEPLETN 1000V 100MA TO-25

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 205719-IXTY01N100D 238-IXTY01N100D-ND IXTY01N100D IXTY01N100D
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY01N100D Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
MOSFET Operating Mode Depletion
V(BR)DSS 1000 volts
PD 1100 to 25000 milliwatts
Unlock Full Specs
to access all available technical data