Manufacturer: IXYS
Win Source Part Number: 205719-IXTY01N100D
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Family Name: IXTY01N100D
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 100mA (Tc)
Max Input Capacitance: 120pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 Ohm @ 50mA, 0V
Alternative Parts (Cross-Reference): IXTY01N100D-TRL;
Introduction Date: June 16, 2017
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2033
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
N-Channel 1000V 100mA (Tc) 1.1W (Ta), 25W (Tc) Surface Mount TO-252AA
MOSFET N-CH 1000V 400MA TO252AA
MOSFET MOSFET N-CH DEPLETN 1000V 100MA TO-25
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 205719-IXTY01N100D | 238-IXTY01N100D-ND | IXTY01N100D | IXTY01N100D |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY01N100D | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| MOSFET Operating Mode | Depletion | |||
| V(BR)DSS | 1000 volts | |||
| PD | 1100 to 25000 milliwatts |