Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY01N100 IXTY01N100

Description
Manufacturer: IXYS Win Source Part Number: 1049967-IXTY01N100 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 100mA (Tc) Gate-Source Threshold Voltage: 4.5V @ 25μA Max Gate Charge: 6.9nC @ 10V Max Input Capacitance: 54pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 80 Ohm @ 100mA, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 70
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Description
Manufacturer: IXYS Win Source Part Number: 1049967-IXTY01N100 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 100mA (Tc) Gate-Source Threshold Voltage: 4.5V @ 25μA Max Gate Charge: 6.9nC @ 10V Max Input Capacitance: 54pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 80 Ohm @ 100mA, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 70
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY01N100 - 1049967-IXTY01N100 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY01N100
1049967-IXTY01N100
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY01N100 1049967-IXTY01N100
Manufacturer: IXYS Win Source Part Number: 1049967-IXTY01N100 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 100mA (Tc) Gate-Source Threshold Voltage: 4.5V @ 25μA Max Gate Charge: 6.9nC @ 10V Max Input Capacitance: 54pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 80 Ohm @ 100mA, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 70

Manufacturer: IXYS
Win Source Part Number: 1049967-IXTY01N100
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current at 25°C: 100mA (Tc)
Gate-Source Threshold Voltage: 4.5V @ 25μA
Max Gate Charge: 6.9nC @ 10V
Max Input Capacitance: 54pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 Ohm @ 100mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 70

Buy Now Datasheet
Single FETs, MOSFETs - IXTY01N100-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTY01N100-ND
Single FETs, MOSFETs IXTY01N100-ND
N-Channel 1000V 100mA (Tc) 25W (Tc) Surface Mount TO-252AA

N-Channel 1000V 100mA (Tc) 25W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 0.1 Amps 1000V 80 Rds

MOSFET 0.1 Amps 1000V 80 Rds

Buy Now Datasheet
MOSFET N-CH 1000V 0.1A DPAK - 401-IXTY01N100 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 1000V 0.1A DPAK
401-IXTY01N100
MOSFET N-CH 1000V 0.1A DPAK 401-IXTY01N100
MOSFET N-CH 1000V 0.1A DPAK

MOSFET N-CH 1000V 0.1A DPAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTY01N100 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTY01N100
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTY01N100
MOSFET N-CH 1000V 100MA TO252AA

MOSFET N-CH 1000V 100MA TO252AA

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049967-IXTY01N100 IXTY01N100-ND IXTY01N100 401-IXTY01N100 IXTY01N100
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY01N100 Single FETs, MOSFETs MOSFET MOSFET N-CH 1000V 0.1A DPAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 1000 volts 1000 volts
PD 25000 milliwatts 25000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK); TO-252AA TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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