Zilog Single FETs, MOSFETs IXTX210P10T

Description
P-Channel 100V 210A (Tc) 1040W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet
Description
P-Channel 100V 210A (Tc) 1040W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXTX210P10T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTX210P10T-ND
Single FETs, MOSFETs IXTX210P10T-ND
P-Channel 100V 210A (Tc) 1040W (Tc) Through Hole PLUS247™-3

P-Channel 100V 210A (Tc) 1040W (Tc) Through Hole PLUS247™-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346761-IXTX210P10T - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1346761-IXTX210P10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1346761-IXTX210P10T
Win Source Part Number: 1346761-IXTX210P10T Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: TrenchP™ Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 100 V Power Dissipation (Max): 1040W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3 Vgs (Max): ±15V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTX210 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V

Win Source Part Number: 1346761-IXTX210P10T
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: TrenchP™
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 100 V
Power Dissipation (Max): 1040W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: PLUS247™-3
Vgs (Max): ±15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTX210
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET P-Channel: Standard MOSFET

MOSFET P-Channel: Standard MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTX210P10T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTX210P10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTX210P10T
MOSFET P-CH 100V 210A PLUS247-3

MOSFET P-CH 100V 210A PLUS247-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTX210P10T-ND 1346761-IXTX210P10T IXTX210P10T IXTX210P10T
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel
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