Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs IXTX17N120L

Description
Win Source Part Number: 1346854-IXTX17N120L Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Linear Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Power Dissipation (Max): 700W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3 Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 54 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTX17 Drive Voltage (Max Rds On, Min Rds On): 20V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
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Description
Win Source Part Number: 1346854-IXTX17N120L Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Linear Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Power Dissipation (Max): 700W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3 Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 54 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTX17 Drive Voltage (Max Rds On, Min Rds On): 20V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346854-IXTX17N120L - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1346854-IXTX17N120L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1346854-IXTX17N120L
Win Source Part Number: 1346854-IXTX17N120L Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Linear Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Power Dissipation (Max): 700W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3 Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 54 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTX17 Drive Voltage (Max Rds On, Min Rds On): 20V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V

Win Source Part Number: 1346854-IXTX17N120L
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Linear
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Power Dissipation (Max): 700W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: PLUS247™-3
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTX17
Drive Voltage (Max Rds On, Min Rds On): 20V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V

Buy Now Datasheet
Single FETs, MOSFETs - IXTX17N120L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTX17N120L-ND
Single FETs, MOSFETs IXTX17N120L-ND
N-Channel 1200V 17A (Tc) 700W (Tc) Through Hole PLUS247™-3

N-Channel 1200V 17A (Tc) 700W (Tc) Through Hole PLUS247™-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTX17N120L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTX17N120L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTX17N120L
MOSFET N-CH 1200V 17A PLUS247-3

MOSFET N-CH 1200V 17A PLUS247-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 17 Amps 1200V

MOSFET 17 Amps 1200V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1346854-IXTX17N120L IXTX17N120L-ND IXTX17N120L IXTX17N120L
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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