Littelfuse, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXTX120N65X2

Description
Win Source Part Number: 1013995-IXTX120N65X2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Ultra X2 Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Power Dissipation (Max): 1250W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3 Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTX120 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1013995-IXTX120N65X2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTX120N65X2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IXTX120N65X2-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTX120N65X2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 650V 120A PLUS247 - 401-IXTX120N65X2 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Win Source Part Number: 1013995-IXTX120N65X2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Ultra X2 Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Power Dissipation (Max): 1250W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3 Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTX120 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1013995-IXTX120N65X2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1013995-IXTX120N65X2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1013995-IXTX120N65X2
Win Source Part Number: 1013995-IXTX120N65X2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Ultra X2 Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Power Dissipation (Max): 1250W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3 Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTX120 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1013995-IXTX120N65X2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Ultra X2
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 1250W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: PLUS247™-3
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTX120
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - IXTX120N65X2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTX120N65X2
Single FETs, MOSFETs IXTX120N65X2
MOSFET N-CH 650V 120A PLUS247-3

MOSFET N-CH 650V 120A PLUS247-3

Supplier's Site Datasheet
Single FETs, MOSFETs - IXTX120N65X2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTX120N65X2-ND
Single FETs, MOSFETs IXTX120N65X2-ND
N-Channel 650V 120A (Tc) 1250W (Tc) Through Hole PLUS247™-3

N-Channel 650V 120A (Tc) 1250W (Tc) Through Hole PLUS247™-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTX120N65X2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTX120N65X2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTX120N65X2
MOSFET N-CH 650V 120A PLUS247-3

MOSFET N-CH 650V 120A PLUS247-3

Supplier's Site
MOSFET N-CH 650V 120A PLUS247 - 401-IXTX120N65X2 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 650V 120A PLUS247
401-IXTX120N65X2
MOSFET N-CH 650V 120A PLUS247 401-IXTX120N65X2
MOSFET N-CH 650V 120A PLUS247

MOSFET N-CH 650V 120A PLUS247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTX120N65X2
MOSFET IXTX120N65X2
MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS

MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1013995-IXTX120N65X2 IXTX120N65X2 IXTX120N65X2-ND IXTX120N65X2 401-IXTX120N65X2 IXTX120N65X2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 650V 120A PLUS247 MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 1.25E6 milliwatts 1.25E6 milliwatts 1.25E6 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 TO-247; TO-247-3 Variant TO-247; TO-247-3 Variant TO-247; TO-247-3 Variant
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