The IXTV102N20T is an N-channel enhancement mode MOSFET designed for high-power switching applications, featuring an avalanche-rated structure and a PLUS220 package with a drain tab. It has a drain-to-source voltage rating of 200 V and a continuous drain current of 102 A at 25°C, with a maximum on-resistance of 23 mΩ at 10 V gate voltage and 51 A drain current. The device supports a maximum junction temperature of 175°C and is rated for 750 W power dissipation at 25°C case temperature. Its gate-source threshold voltage ranges from 2.5 V to 4.5 V, and it exhibits a gate charge of 114 nC at 10 V. The package has four terminals: gate, drain, source, and a connected drain tab.
Win Source Part Number: 1346689-IXTV102N20T
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: TrenchHV™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Power Dissipation (Max): 750W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Supplier Device Package: PLUS220
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 41 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTV102
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1346689-IXTV102N20T |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs |
| Polarity | N-Channel |
