Zilog Single FETs, MOSFETs IXTU4N70X2

Description
N-Channel 700V 4A (Tc) 80W (Tc) Through Hole TO-251
Request a Quote Datasheet
Description
N-Channel 700V 4A (Tc) 80W (Tc) Through Hole TO-251
Request a Quote Datasheet

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Product
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Single FETs, MOSFETs - 238-IXTU4N70X2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTU4N70X2-ND
Single FETs, MOSFETs 238-IXTU4N70X2-ND
N-Channel 700V 4A (Tc) 80W (Tc) Through Hole TO-251

N-Channel 700V 4A (Tc) 80W (Tc) Through Hole TO-251

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346882-IXTU4N70X2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1346882-IXTU4N70X2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1346882-IXTU4N70X2
Win Source Part Number: 1346882-IXTU4N70X2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Ultra X2 Package: Tube Standard Package: 70 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 700 V Power Dissipation (Max): 80W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Supplier Device Package: TO-251-3 Vgs (Max): ±30V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTU4 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V

Win Source Part Number: 1346882-IXTU4N70X2
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Ultra X2
Package: Tube
Standard Package: 70
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 700 V
Power Dissipation (Max): 80W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251-3
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTU4
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTU4N70X2 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTU4N70X2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTU4N70X2
MOSFET N-CH 700V 4A TO251

MOSFET N-CH 700V 4A TO251

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 238-IXTU4N70X2-ND 1346882-IXTU4N70X2 IXTU4N70X2
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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