Zilog 800V 2A MOSFET Transistor IXTU2N80P

Description
MOSFET N-CH 800V 2A TO251 Product overview: IXTU2N80P from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTU2N80P can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 800V 2A TO251 Product overview: IXTU2N80P from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTU2N80P can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
800V 2A MOSFET Transistor
278-IXTU2N80P
800V 2A MOSFET Transistor 278-IXTU2N80P
MOSFET N-CH 800V 2A TO251 Product overview: IXTU2N80P from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTU2N80P can be used for catalog matching and distributor lookup.

MOSFET N-CH 800V 2A TO251 Product overview: IXTU2N80P from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTU2N80P can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTU2N80P - 1049963-IXTU2N80P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTU2N80P
1049963-IXTU2N80P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTU2N80P 1049963-IXTU2N80P
Manufacturer: IXYS Win Source Part Number: 1049963-IXTU2N80P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 5.5V @ 50μA Max Gate Charge: 10.6nC @ 10V Max Input Capacitance: 440pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Application Field: Used in LED Lighting, Signalling, Industrial Quantity per package: 75

Manufacturer: IXYS
Win Source Part Number: 1049963-IXTU2N80P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 50μA
Max Gate Charge: 10.6nC @ 10V
Max Input Capacitance: 440pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Application Field: Used in LED Lighting, Signalling, Industrial
Quantity per package: 75

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTU2N80P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTU2N80P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTU2N80P
MOSFET N-CH 800V 2A TO251

MOSFET N-CH 800V 2A TO251

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-IXTU2N80P 1049963-IXTU2N80P IXTU2N80P
Product Name 800V 2A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTU2N80P Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 70000 milliwatts 70000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tube SOT3; TO-251 TO-251-3 Short Leads, IPak, TO-251AA
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