Manufacturer: IXYS
Win Source Part Number: 1049963-IXTU2N80P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 50μA
Max Gate Charge: 10.6nC @ 10V
Max Input Capacitance: 440pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Application Field: Used in LED Lighting, Signalling, Industrial
Quantity per package: 75
MOSFET N-CH 800V 2A TO251
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049963-IXTU2N80P | IXTU2N80P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTU2N80P | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | |
| V(BR)DSS | 800 volts | |
| PD | 70000 milliwatts |
