MOSFET N-CH 800V 2A TO251 Product overview: IXTU2N80P from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTU2N80P can be used for catalog matching and distributor lookup.
Manufacturer: IXYS
Win Source Part Number: 1049963-IXTU2N80P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 50μA
Max Gate Charge: 10.6nC @ 10V
Max Input Capacitance: 440pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Application Field: Used in LED Lighting, Signalling, Industrial
Quantity per package: 75
MOSFET N-CH 800V 2A TO251
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IXTU2N80P | 1049963-IXTU2N80P | IXTU2N80P |
| Product Name | 800V 2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTU2N80P | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 70000 milliwatts | 70000 milliwatts | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | Tube | SOT3; TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |