Zilog Single FETs, MOSFETs IXTU12N06T

Description
N-Channel 60V 12A (Tc) 33W (Tc) Through Hole TO-251AA
Request a Quote Datasheet
Description
N-Channel 60V 12A (Tc) 33W (Tc) Through Hole TO-251AA
Request a Quote Datasheet

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Product
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Single FETs, MOSFETs - IXTU12N06T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTU12N06T-ND
Single FETs, MOSFETs IXTU12N06T-ND
N-Channel 60V 12A (Tc) 33W (Tc) Through Hole TO-251AA

N-Channel 60V 12A (Tc) 33W (Tc) Through Hole TO-251AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTU12N06T - 1049961-IXTU12N06T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTU12N06T
1049961-IXTU12N06T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTU12N06T 1049961-IXTU12N06T
Manufacturer: IXYS Win Source Part Number: 1049961-IXTU12N06T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-251 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 25μA Max Gate Charge: 3.4nC @ 10V Max Input Capacitance: 256pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049961-IXTU12N06T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-251
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 25μA
Max Gate Charge: 3.4nC @ 10V
Max Input Capacitance: 256pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTU12N06T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTU12N06T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTU12N06T
MOSFET N-CH 60V 12A TO251

MOSFET N-CH 60V 12A TO251

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTU12N06T-ND 1049961-IXTU12N06T IXTU12N06T
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTU12N06T Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; TO-251 TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 60 volts
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