Manufacturer: IXYS
Win Source Part Number: 1049959-IXTU01N100D
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 0V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current at 25°C: 100mA (Tc)
Gate-Source Threshold Voltage: 5V @ 25μA
Max Input Capacitance: 120pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 Ohm @ 50mA, 0V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
MOSFET N-CH 1000V 400MA TO251
N-Channel 1000V 100mA (Tc) 1.1W (Ta), 25W (Tc) Through Hole TO-251AA
MOSFET N-CH 1000V 400MA TO251
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1049959-IXTU01N100D | IXTU01N100D | IXTU01N100D-ND | IXTU01N100D |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTU01N100D | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |
| MOSFET Operating Mode | Depletion | |||
| V(BR)DSS | 1000 volts | 1000 volts | ||
| PD | 1100 to 25000 milliwatts | 1100 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
