Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs IXTT82N25P

Description
Win Source Part Number: 1346835-IXTT82N25P Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Polar Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250 V Power Dissipation (Max): 500W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: TO-268AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 38 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT82 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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Description
Win Source Part Number: 1346835-IXTT82N25P Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Polar Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250 V Power Dissipation (Max): 500W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: TO-268AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 38 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT82 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346835-IXTT82N25P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1346835-IXTT82N25P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1346835-IXTT82N25P
Win Source Part Number: 1346835-IXTT82N25P Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Polar Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250 V Power Dissipation (Max): 500W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: TO-268AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 38 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT82 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V

Win Source Part Number: 1346835-IXTT82N25P
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Polar
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250 V
Power Dissipation (Max): 500W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Supplier Device Package: TO-268AA
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 38 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTT82
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTT82N25P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
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Single FETs, MOSFETs 238-IXTT82N25P-ND
N-Channel 250V 82A (Tc) 500W (Tc) Surface Mount TO-268AA

N-Channel 250V 82A (Tc) 500W (Tc) Surface Mount TO-268AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT82N25P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTT82N25P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTT82N25P
MOSFET N-CH 250V 82A TO268

MOSFET N-CH 250V 82A TO268

Supplier's Site
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MOSFET 82 Amps 250V 0.035 Rds

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1346835-IXTT82N25P 238-IXTT82N25P-ND IXTT82N25P IXTT82N25P
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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