MOSFET N-CH 300V 69A TO268
Manufacturer: IXYS
Win Source Part Number: 205718-IXTT69N30P
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-268
Dimension: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 69A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 180nC @ 10V
Max Input Capacitance: 4960pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 49 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
N-Channel 300V 69A (Tc) 500W (Tc) Surface Mount TO-268AA
MOSFET N-CH 300V 69A TO268
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTT69N30P | 205718-IXTT69N30P | IXTT69N30P-ND | IXTT69N30P | IXTT69N30P |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT69N30P | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 300 volts | 300 volts | |||
| IDSS | 69000 milliamps |
