Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs IXTT60N20L2

Description
Win Source Part Number: 1346793-IXTT60N20L2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Linear L2™ Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Power Dissipation (Max): 540W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: TO-268AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 35 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT60 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346793-IXTT60N20L2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTT60N20L2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IXTT60N20L2-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT60N20L2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1346793-IXTT60N20L2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Linear L2™ Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Power Dissipation (Max): 540W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: TO-268AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 35 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT60 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346793-IXTT60N20L2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1346793-IXTT60N20L2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1346793-IXTT60N20L2
Win Source Part Number: 1346793-IXTT60N20L2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Linear L2™ Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Power Dissipation (Max): 540W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: TO-268AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 35 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT60 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V

Win Source Part Number: 1346793-IXTT60N20L2
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Linear L2™
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Power Dissipation (Max): 540W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Supplier Device Package: TO-268AA
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 35 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTT60
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V

Buy Now Datasheet
Single FETs, MOSFETs - IXTT60N20L2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTT60N20L2
Single FETs, MOSFETs IXTT60N20L2
MOSFET N-CH 200V 60A TO268

MOSFET N-CH 200V 60A TO268

Supplier's Site Datasheet
Single FETs, MOSFETs - IXTT60N20L2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTT60N20L2-ND
Single FETs, MOSFETs IXTT60N20L2-ND
N-Channel 200V 60A (Tc) 540W (Tc) Surface Mount TO-268AA

N-Channel 200V 60A (Tc) 540W (Tc) Surface Mount TO-268AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT60N20L2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTT60N20L2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTT60N20L2
MOSFET N-CH 200V 60A TO268

MOSFET N-CH 200V 60A TO268

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTT60N20L2
MOSFET IXTT60N20L2
MOSFET LINEAR L2 SERIES MOSFET 200V 60A

MOSFET LINEAR L2 SERIES MOSFET 200V 60A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1346793-IXTT60N20L2 IXTT60N20L2 IXTT60N20L2-ND IXTT60N20L2 IXTT60N20L2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 540000 milliwatts 540000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D3PAK (2 Leads + Tab), TO-268AA TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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