IXYS Integrated Circuits Division MOSFET IXTT50N30

N-Channel enhancement mode MOSFET designed for high-current applications, available in TO-268 package, measuring 20.80 to 21.46 mm in length, 15.75 to 16.26 mm in width, and 5.20 to 5.72 mm in lead spacing. Rated for a drain-source voltage of 300 V, continuous drain current of 50 A at 25°C, and pulsed drain current of 200 A. Typical on-resistance is 65 mΩ at 10 V gate voltage and 50 A drain current. Maximum junction temperature is 150°C. Supports unclamped inductive switching and features low package inductance. Classified as AEC-Q200 qualified and RoHS compliant.