Zilog Single FETs, MOSFETs IXTT48P20P

Description
P-Channel 200V 48A (Tc) 462W (Tc) Surface Mount TO-268AA
Request a Quote Datasheet
Description
P-Channel 200V 48A (Tc) 462W (Tc) Surface Mount TO-268AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXTT48P20P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTT48P20P-ND
Single FETs, MOSFETs 238-IXTT48P20P-ND
P-Channel 200V 48A (Tc) 462W (Tc) Surface Mount TO-268AA

P-Channel 200V 48A (Tc) 462W (Tc) Surface Mount TO-268AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT48P20P - 205717-IXTT48P20P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT48P20P
205717-IXTT48P20P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT48P20P 205717-IXTT48P20P
Manufacturer: IXYS Win Source Part Number: 205717-IXTT48P20P Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 462W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-268 Dimension: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 48A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 103nC @ 10V Max Input Capacitance: 5400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 24A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 205717-IXTT48P20P
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 462W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-268
Dimension: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 48A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 103nC @ 10V
Max Input Capacitance: 5400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 24A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXTT48P20P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTT48P20P
Single FETs, MOSFETs IXTT48P20P
MOSFET P-CH 200V 48A TO268

MOSFET P-CH 200V 48A TO268

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -48.0 Amps -200V 0.085 Rds

MOSFET -48.0 Amps -200V 0.085 Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT48P20P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTT48P20P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTT48P20P
MOSFET P-CH 200V 48A TO268

MOSFET P-CH 200V 48A TO268

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 238-IXTT48P20P-ND 205717-IXTT48P20P IXTT48P20P IXTT48P20P IXTT48P20P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT48P20P Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel
Package Type TO-268-3, D3PAK (2 Leads + Tab), TO-268AA SOT3; TO-268 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
V(BR)DSS 200 volts 200 volts
PD 462000 milliwatts 462000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor - QPD1015 - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
3 suppliers