Zilog Single FETs, MOSFETs IXTT2N170D2

Description
N-Channel 1700V 2A (Tj) 568W (Tc) Surface Mount TO-268AA
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Description
N-Channel 1700V 2A (Tj) 568W (Tc) Surface Mount TO-268AA
Request a Quote Datasheet

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Single FETs, MOSFETs - 238-IXTT2N170D2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTT2N170D2-ND
Single FETs, MOSFETs 238-IXTT2N170D2-ND
N-Channel 1700V 2A (Tj) 568W (Tc) Surface Mount TO-268AA

N-Channel 1700V 2A (Tj) 568W (Tc) Surface Mount TO-268AA

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1339975-IXTT2N170D2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1339975-IXTT2N170D2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1339975-IXTT2N170D2
Win Source Part Number: 1339975-IXTT2N170D2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 1700 V Power Dissipation (Max): 568W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: TO-268AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 36 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT2 California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 2A (Tj) Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 0V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V

Win Source Part Number: 1339975-IXTT2N170D2
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Depletion
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 1700 V
Power Dissipation (Max): 568W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Supplier Device Package: TO-268AA
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 36 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTT2
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 0V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V

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Sheung Wan, Hong Kong
MOSFET 1700V 2A

MOSFET 1700V 2A

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT2N170D2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTT2N170D2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTT2N170D2
MOSFET N-CH 1700V 2A TO268

MOSFET N-CH 1700V 2A TO268

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 238-IXTT2N170D2-ND 1339975-IXTT2N170D2 IXTT2N170D2 IXTT2N170D2
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type TO-268-3, D3PAK (2 Leads + Tab), TO-268AA SOT3 TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
MOSFET Operating Mode Depletion
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