Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXTT170N10P

Description
Win Source Part Number: 1188698-IXTT170N10P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Polar Package: Tube Standard Package: 30 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 715W (Tc) Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT170 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1188698-IXTT170N10P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 238-IXTT170N10P-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT170N10P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1188698-IXTT170N10P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Polar Package: Tube Standard Package: 30 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 715W (Tc) Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT170 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1188698-IXTT170N10P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1188698-IXTT170N10P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1188698-IXTT170N10P
Win Source Part Number: 1188698-IXTT170N10P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Polar Package: Tube Standard Package: 30 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 715W (Tc) Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT170 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1188698-IXTT170N10P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Polar
Package: Tube
Standard Package: 30
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 715W (Tc)
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTT170
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTT170N10P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTT170N10P-ND
Single FETs, MOSFETs 238-IXTT170N10P-ND
N-Channel 100V 170A (Tc) 715W (Tc) Surface Mount TO-268AA

N-Channel 100V 170A (Tc) 715W (Tc) Surface Mount TO-268AA

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTT170N10P
MOSFET IXTT170N10P
MOSFET 170 Amps 100V 0.009 Ohm Rds

MOSFET 170 Amps 100V 0.009 Ohm Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT170N10P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTT170N10P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTT170N10P
MOSFET N-CH 100V 170A TO268

MOSFET N-CH 100V 170A TO268

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1188698-IXTT170N10P 238-IXTT170N10P-ND IXTT170N10P IXTT170N10P
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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