Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXTT170N10P

Description
Win Source Part Number: 1188698-IXTT170N10P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Polar Package: Tube Standard Package: 30 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 715W (Tc) Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT170 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1188698-IXTT170N10P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Polar Package: Tube Standard Package: 30 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 715W (Tc) Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT170 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1188698-IXTT170N10P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1188698-IXTT170N10P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1188698-IXTT170N10P
Win Source Part Number: 1188698-IXTT170N10P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Polar Package: Tube Standard Package: 30 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 715W (Tc) Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT170 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1188698-IXTT170N10P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Polar
Package: Tube
Standard Package: 30
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 715W (Tc)
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTT170
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTT170N10P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTT170N10P-ND
Single FETs, MOSFETs 238-IXTT170N10P-ND
N-Channel 100V 170A (Tc) 715W (Tc) Surface Mount TO-268AA

N-Channel 100V 170A (Tc) 715W (Tc) Surface Mount TO-268AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT170N10P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTT170N10P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTT170N10P
MOSFET N-CH 100V 170A TO268

MOSFET N-CH 100V 170A TO268

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 170 Amps 100V 0.009 Ohm Rds

MOSFET 170 Amps 100V 0.009 Ohm Rds

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1188698-IXTT170N10P 238-IXTT170N10P-ND IXTT170N10P IXTT170N10P
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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